User’s Guide for UTQUANT 3.0

 

I. Installation

 

  1. Download the software.

UTQUANT is freeware. Click here to download (You will need at least 15MB of free disk space to download and uncompress).

  1. From a PC, uncompress “utquant_3.0pre1a.zip” using WINZIP software. Hit extract button and designate the directory. It will create a folder named utquant_3.0pre1a. If you don’t have WINZIP, you can download at http://www.winzip.com/
  2. Move the folder to your unity account.
  3. Login to any workstation and go to the folder you just moved (cd utquant_3.0pre1a).
  4. Under the folder you will find 4 different sub directories, which are documents, examples, exec and src.
  5. Move to the src directory (cd src).
  6. Open the file named quantum.h using any text editor. For example, type nedit quantum.h
  7. When you open the file quantum.h, you will find

 

#define VERSION "3.0pre1"

 

/*#define PATH "/home/yyfan/usr/utquant_2.2/exec/"*/

/*#define PATH "/homes/linus/yyfan/utquant_2.2/exec/"*/

 

Change PATH name with your unity directory. For example, if your unity id is ikim2, the PATH name should be

 

#define PATH "/afs/unity.ncsu.edu/users/i/ikim2/utquant_3.0pre1a/exec/"

   #define PATH "/afs/unity.ncsu.edu/users/i/ikim2/utquant_3.0pre1a/exec/"

 

  1. Save modified quantum.h file and type “make”. This will generate the executable files in the “src” directory.
  2. Move executable file named ‘utquant’ from the “src” directory to the directory “exec”

 

 

II. Running the simulation

 

  1. Go to the folder utquant_3.0pre1a/exec. Under this directory, create an input file. Below is an example of the input file.

 

EPS_INS = 5.5

insulator_thickness = 6

MC_OX = 0.35

MV_OX = 0.35

VB_SIO2 = 1.0

EGOX = 4.5

EPS_HIGHK = 20.0

highk_thickness = 33.6

MC_HK = 0.35

MV_HK = 0.35

VB_HK = 1.45

EGHK = 5.7

ins_type ? 0

rough_exp_elec = 2.000

rough_exp_hole = 1.000

gate_voltage = 3.0

dVg = 0.1

gate_material = 3

variable_polydoping ? 0

poly_doping = 6.000e+20

E_act_poly = 0.5535

work_function = 4.5

bulk_source_voltage = 0.000

variable_subdoping ? 0

doping_conc = -5e+15

E_act_sub = -0.5763

strain ? 0

mole_fraction = 0.000

CLASSICAL ? 0

Fermi_Dirac ? 1

Incomplete_Ionization ? 1

FAST ? 1

TUNNEL ? 1

WKB ? 3

MOMENTUM_RELAXED = 0

FNTNL ? 0

IMAGE ? 0

dVg_tunnel = 0.05

TL = 300.00

currentForVti = 4.000e-08

NFIX = -0.0e12

const_Dit ? 1

Dit = 0e+12

option = 1

hidoping = 1

 

Please refer to the manual (can be found in the utquant_3.0pre1a/documents) Section II-1 and II-2 for detailed description of each line. Create input file with any editor and save it as *.input.

2.      Running the simulation

To run the simulation of the input file you created, type “utuqnat *.input”. This will create several output files. For detailed description of each output files, please see Section II-3 of the manual

Note) in case multiple simulations are needed, please move all the output files to other directories. New simulation will create output files with the same names; thus all old output files will be overwritten.

 

III. References

 

[1] S. Jallepalli, J. Bude, W.-K. Shih, M. R. Pinto, C. M. Maziar, and A. F. Tasch, “Electron and hole quantization and their impact on deep submicron silicon p- and n- MOSFET characteristics,” IEEE Trans. Elec. Dev., Vol. 44, pp. 297, 1997

[2] S. Jallepalli, Ph.D. dissertatioin, The University of Texas at Austin, 1996

[3] W.-K. Shih, X. Wang, S. Jallepalli, C. M. Maziar, and A. F. Tasch, “Modeling gate leakage current in nMOS structures due to direct tunneling through ultra-thin oxide,” ,1997

[4] G. Chindlore, S. A. Hareland, S. Jallepalli, A. F. Tasch, C. M. Maziar, V. K. F. Chia, and S. Smith, “Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers,” IEEE Elec. Dev. Lett., Vol. 18, 1997

[5] I. Kim, “Device Fabrication and Characterization for Alternative Gate Stack Devices, Chapter 2,” Ph.D. Dissertation, NCSU, 2003

[6] S. Mudanai, Y. Fan, Q, Quyang, A.F. Tasch, S.K. Banerjee, “ Modeling of Direct Tunneling Current Through Gate Dielectric Stacks,” IEEE Trans. Elec. Dev., Vol. 47, No. 10, p.1851, 2000

[7] Y. Fan, R.E. Nieh, J.C. Lee, G. Lucovsky, G.A. Brown, L.F. Register, S.K. Banerjee, “Voltage and Temperature Dependent Gate Capacitance and Current Model: Application to ZrO2 n-channel MOS Capacitor,” IEEE Trans. Elec. Dev., Vol. 49, No. 11, p.1969, 2002